例句與造句

1. A study on electrochemical corrosion of surface reaction of pyrite in high alkali environment
   高堿環(huán)境中黃鐵礦表面反應(yīng)的腐蝕電化學(xué)研究
2. The surface reaction of water atomized 304l austenitic stainless steel powder during sintering has been studied
   摘要研究了水霧化奧氏體不銹鋼粉末在致密時的表面化學(xué)反應(yīng)。
3. The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
   柵泄漏電流的減小可歸于氧空位缺陷的減小，即高的濺射氧氣氛和氧氣氛退火有助于減小hfo _ 2柵介質(zhì)中的氧空位缺陷； 4 )研究了反應(yīng)濺射制備的hfo _ 2柵介質(zhì)漏電流機(jī)制及其silc效應(yīng)。
4. Xrd and sem analysis showed that the main composition of the white substance which formed in cracks is caco3 , which can block cracks and is probably the main cause of self - sealing . two processes which called surface reaction process and diffuse reaction process are defined in the formation process of caco3 . the phenomenons in self - sealing experiment can be explained by those two processes
   對試件裂縫中沉積的白色物質(zhì)做sem 、 xrd分析得出其成份主要為caco _ 3 ， caco _ 3堵塞裂縫應(yīng)該是引起自愈現(xiàn)象的主要原因； caco _ 3的生成包括表面反應(yīng)和擴(kuò)散反應(yīng)兩個階段，這在一定程度上解釋了自愈現(xiàn)象先快后慢和自愈幅度砂漿混凝土凈漿。
5. The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
   采用pld技術(shù)進(jìn)行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應(yīng)氣體壓強(qiáng)對薄膜結(jié)構(gòu)特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結(jié)構(gòu)成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強(qiáng)pld的氣相反應(yīng)，給出了提高薄膜晶態(tài)sp ~ 3鍵合結(jié)構(gòu)成分和薄膜的含n量可行性途徑；應(yīng)用pe - cvd技術(shù)以ch _ 4 + n _ 2為反應(yīng)氣體并引入輔助氣體h _ 2 ，得到了含n量為56at的晶態(tài)cn薄膜；探討了cn薄膜形貌、成分、晶體結(jié)構(gòu)、價鍵狀態(tài)等特性及其與氣體壓強(qiáng)和放電電流的關(guān)系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學(xué)平衡條件的各種反應(yīng)過程的競爭結(jié)果；采用光學(xué)發(fā)射譜技術(shù)對cn薄膜生長過程進(jìn)行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應(yīng)過程的影響規(guī)律，給出了cn薄膜沉積的主要反應(yīng)前驅(qū)物，揭示了cn薄膜特性和等離子體內(nèi)反應(yīng)過程之間的聯(lián)系；采用高氣壓pe - pld技術(shù)研究了不同襯底溫度條件下cn化合物薄膜的結(jié)構(gòu)特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進(jìn)行cn薄膜沉積，證明了通過控制材料表面動力學(xué)條件可以改變碳氮薄膜結(jié)構(gòu)特性，并可顯著提高晶態(tài)碳氮材料的生長速率。
6. It's difficult to find surface reaction in a sentence. 用surface reaction造句挺難的